Andrew V. Teplyakov
Biography
(b. 1970), B.S., 1992, Moscow State University; M.S., 1993, Ph.D., 1997, Columbia University; Postdoctoral Fellow, 1997 – 1998, New York University
Current Research
Our research program focuses on surface and interface science. The beauty of this discipline is in its links with analytical, organic, and inorganic chemistry. Using the techniques and methods of physical chemistry, we solve problems related to chemical transformations of organic and organometallic compounds on semiconductors, thin solid film growth and etching, nanostructure and nanomaterial formation. We study these processes at the molecular level with vibrational spectroscopies, high-energy electron spectroscopies, mass spectrometry, X-ray spectroscopies, microscopic techniques and supplement these experimental studies with computational investigations.
Current research projects include chemical modification of semiconductor surfaces to tune their physical (band alignment and bending, charge carrier properties) and chemical (functionalization, passivation) properties to adjust those to a specific application and to control deposition and etching chemistry of materials with atomic precision (ALD and ALE).
We are also interested in covalent attachment of large molecules and nanoparticles to surfaces to yield novel interfaces, thin films, and materials. We have used C60 Buckminster fullerenes and their derivatives as well as carbon nanotubes as spectroscopic and microscopic probes to establish the covalent nature of their binding to appropriately terminated self-assembled monolayers on silicon. We have also investigated the possibility of designing new approaches to layer-by-layer growth of nanoparticle thin films leading to exceptionally high coverages based on covalent attachment rather than self-assembly. More recently, my group is interested in tuning defects on semiconductor surfaces to promote (growth surface) or suppress (non-growth surfaces) film deposition and in controlling defects in thin films used in solar cells.
The key in all these projects is to understand the chemical processes on surfaces and at interfaces with atomic and molecular precision.
Representative Publications
Parke, T., Silva-Quinones, D., Wang, G. T., and Teplyakov, A. V. The Effect of Surface Terminations on the Initial Stages of TiO2 Deposition on Functionalized Silicon. ChemPhysChem 2023, e202200724, DOI: 10.1002/cphc.202200724.
Konh, M., Wang, Y., Pina, M., Xiao, J. Q., and Teplyakov, A. V. Effects of Atomic Layer Etching on Magnetic Properties of CoFeB Films: Reduction of Gilbert Damping. J. Magn. Magn. Mater. 2022, 564(2), 170052, DOI: 10.1016/j.jmmm.2022.170052.
Konh, M., Janotti, A., and Teplyakov, A. V. Molecular Mechanism of Thermal Dry Etching of Iron in a Two-Step Atomic Layer Etching Process: Chlorination Followed by Exposure to Acetylacetone. J. Phys. Chem. C 2021, 125(13), 7142-7154, DOI: 10.1021/acs.jpcc.0c10556.
Byron, C., Bai, S., Çelik, G., Ferrandon, M. S., Liu, C., Ni, C., Mehdad, A., Delferro, M., Lobo, R. F., and Teplyakov, A. V. Role of Boron in Enhancing the Catalytic Performance of Supported Platinum Catalysts for Non-Oxidative Dehydrogenation of n-Butane. ACS Catal. 2020, 10, 1500-1510, DOI: 10.1021/acscatal.9b04689.
Barry, S. T., Teplyakov, A. V., and Zaera, F. The Chemistry of Inorganic Precursors during the Chemical Deposition of Films on Solid Surfaces. Acc. Chem. Res. 2018, 51, 800-809, DOI 10.1021/acs.accounts.8b00012.
Gao, F., Aminane, S., Bai, S., and Teplyakov, A. V. Chemical Protection of Material Morphology: Robust and Gentle Gas-Phase Surface Functionalization of ZnO with Propiolic Acid. Chem. Mater. 2017, 29(9), 4063-4071, DOI: 10.1021/acs.chemmater.7b0074
Tian, F., Taber, D. F. and Teplyakov, A. V. –NH- Termination on Si(111) Surface by Wet Chemistry. J. Am. Chem. Soc. 2011, 133, 20769-20777, DOI: 10.1021/ja205140h.
Bent, S. F.; Kachian, J. S.; Rodríguez-Reyes, J. C. F. and Teplyakov, A. V. Tuning the Reactivity of Semiconductor Surfaces by Functionalization with Amines of Different Basicity. PNAS 2011, 108(3), 956-960
